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Proceedings Paper

Advanced technology for after-develop inspection
Author(s): Z. Y. Chen; I. C. Chou; J. H. Yang; Wallas Chen; Josh Chang; Henry Chen; Melvin Ng; Meng-Che Wu; Cathy Perry-Sullivan; Mingwei Li
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Paper Abstract

This paper describes a methodology for after-develop inspection (ADI) using a broadband DUV/UV/visible brightfield inspector with a unique optical mode. The VIB (Varied Illumination Brightfield) optical mode enables capture of unique killer defects at low nuisance rate on certain 45nm and 32nm ADI layers, significantly improving litho inspection sensitivity. By implementing this inspection, defect engineers were able to detect critical excursions at ADI rather than at later process steps. This shortened process development time and allowed for re-work, significantly reducing wafer cost.

Paper Details

Date Published: 1 December 2008
PDF: 6 pages
Proc. SPIE 7140, Lithography Asia 2008, 71400Y (1 December 2008); doi: 10.1117/12.804661
Show Author Affiliations
Z. Y. Chen, Taiwan Semiconductor Manufacturing Co. (Taiwan)
I. C. Chou, Taiwan Semiconductor Manufacturing Co. (Taiwan)
J. H. Yang, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Wallas Chen, KLA-Tencor Corp. (Taiwan)
Josh Chang, KLA-Tencor Corp. (Taiwan)
Henry Chen, KLA-Tencor Corp. (Taiwan)
Melvin Ng, KLA-Tencor Corp. (Taiwan)
Meng-Che Wu, KLA-Tencor Corp. (Taiwan)
Cathy Perry-Sullivan, KLA-Tencor Corp. (Taiwan)
Mingwei Li, KLA-Tencor Corp. (Taiwan)

Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)

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