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Proceedings Paper

Acid diffusion length dependency for 32-nm node attenuated and chromeless phase shift mask
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Paper Abstract

We applied the immersion lithography to get 32 nm node pattern with 1.55 NA, without using double exposure / double patterning. A chromeless phase shift mask is compared with an attenuated phase shift mask to make 32 nm dense 1:1 line and space pattern. We compared the aerial image, normalized image log slope, exposure latitude, and depth of focus for each mask type in order to see the effect of the post exposure bake and acid diffusion length. The process window shrinks fast if the diffusion length is larger than 10 nm for both mask types. However, up to 20 nm diffusion length, 32 nm can be processible if the exposure latitude of 5% is used in production.

Paper Details

Date Published: 4 December 2008
PDF: 7 pages
Proc. SPIE 7140, Lithography Asia 2008, 71403U (4 December 2008); doi: 10.1117/12.804611
Show Author Affiliations
Jee-Hye You, Hanyang Univ. (Korea, Republic of)
Young-Min Kang, Hanyang Univ. (Korea, Republic of)
Minhee Jung, Hanyang Univ. (Korea, Republic of)
Hye-Keun Oh, Hanyang Univ. (Korea, Republic of)

Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)

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