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Proceedings Paper

Influences of various defects on extreme ultra-violet mask
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Paper Abstract

Mask defect is one of the biggest problems in Extreme Ultraviolet Lithography (EUV) technology. EUV mask must be free of small defects, requiring development of new inspection tools and low defect fabrication processes. So, we studied the influences of the defects on the mask for 22 nm line and space pattern. First, we changed the light quality caused by the various wavelength shift, incident angle, and the defect material with different refractive index. Second, we changed the defect size from 20 nm to 16 nm because 18 nm defect is assumed to a critical defect size for 22 nm node. Third, we also changed the defect positions; on top of the absorber, on the valley of the absorber, and at the sides of the absorber. Finally, we simulated the influence for the different shaped defect. A square pillar defect shows very different behavior compared to the more realistic round shaped defect. Defect of higher refractive index gives little influence, while defect of lower refractive index gives larger influence. A more realistic elliptical shaped defect gives less influence compared to square shaped defect. All the defect and EUV parameters will influence to the printability of the defect, but more study is needed to judge whether a certain defect can influence the printed pattern.

Paper Details

Date Published: 4 December 2008
PDF: 11 pages
Proc. SPIE 7140, Lithography Asia 2008, 71401N (4 December 2008); doi: 10.1117/12.804570
Show Author Affiliations
Eun-Jin Kim, Hanyang Univ. (South Korea)
Jee-Hye You, Hanyang Univ. (South Korea)
Jung-Youl Lee, Dongjin Semichem Co. Ltd. (South Korea)
Deog-Bae Kim, Dongjin Semichem Co. Ltd. (South Korea)
Jae-Hyun Kim, Dongjin Semichem Co. Ltd. (South Korea)
Hye-Keun Oh, Hanyang Univ. (South Korea)

Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)

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