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Proceedings Paper

Lithography hotspot discovery at 70nm DRAM 300mm fab: process window qualification using design base binning
Author(s): Daniel Chen; Damian Chen; Ray Yen; Mingjen Cheng; Andy Lan; Rajesh Ghaskadvi
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Paper Abstract

Identifying hotspots--structures that limit the lithography process window--become increasingly important as the industry relies heavily on RET to print sub-wavelength designs. KLA-Tencor's patented Process Window Qualification (PWQ) methodology has been used for this purpose in various fabs. PWQ methodology has three key advantages (a) PWQ Layout--to obtain the best sensitivity (b) Design Based Binning--for pattern repeater analysis (c) Intelligent sampling--for the best DOI sampling rate. This paper evaluates two different analysis strategies for SEM review sampling successfully deployed at Inotera Memories, Inc. We propose a new approach combining the location repeater and pattern repeaters. Based on a recent case study the new sampling flow reduces the data analysis and sampling time from 6 hours to 1.5 hour maintaining maximum DOI sample rate.

Paper Details

Date Published: 4 December 2008
PDF: 7 pages
Proc. SPIE 7140, Lithography Asia 2008, 71400R (4 December 2008); doi: 10.1117/12.804563
Show Author Affiliations
Daniel Chen, Inotera Memories Inc. (Taiwan)
Damian Chen, KLA-Tencor Corp. (United States)
Ray Yen, Inotera Memories Inc. (Taiwan)
Mingjen Cheng, Inotera Memories Inc. (Taiwan)
Andy Lan, Inotera Memories Inc. (Taiwan)
Rajesh Ghaskadvi, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)

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