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Proceedings Paper

Accelerating 32nm BEOL technology development by advanced wafer inspection methodology
Author(s): P. R. Jeng; C. L. Lin; Simon Jang; M. S. Liang; Wallas Chen; David Tsui; Damian Chen; Henry Chen; Chris Young; Ellis Chang
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Paper Abstract

In the early development stage of 32nm processes, identifying and isolating systematic defects is critical to understanding the issues related to design and process interactions. Conventional inspection methodologies using random review sampling on large defect populations do not provide the information required to take accurate and quick corrective action. This paper demonstrates the successful identification and isolation of systematic defects using a novel methodology that combines Design Based Binning (DBB) and inline Defect Organizer (iDO). This new method of integrating design and defect data produced actionable inspection data, resulting in fewer mask revisions and reduced device development time.

Paper Details

Date Published: 4 December 2008
PDF: 10 pages
Proc. SPIE 7140, Lithography Asia 2008, 71400S (4 December 2008); doi: 10.1117/12.804526
Show Author Affiliations
P. R. Jeng, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
C. L. Lin, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Simon Jang, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
M. S. Liang, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Wallas Chen, KLA-Tencor Corp. (United States)
David Tsui, KLA-Tencor Corp. (United States)
Damian Chen, KLA-Tencor Corp. (United States)
Henry Chen, KLA-Tencor Corp. (United States)
Chris Young, KLA-Tencor Corp. (United States)
Ellis Chang, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)

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