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Proceedings Paper

The structural and optical properties of high-Al-content AlInGaN epilayers grown by RF-MBE
Author(s): Baozhu Wang; Tao An; Huanming Wen; Ruihong Wu; Shengbiao An; Xiuqing Zhang; Xiaoliang Wang
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Paper Abstract

AlInGaN Quaternary Alloys were successfully grown on sapphire substrate by radio-frequency plasma-excited molecular beam epitaxy (RF-MBE). Different Al content AlInGaN quaternary alloys were acquired by changing the Al cell's temperature. The streaky RHEED pattern observed during AlInGaN growth showed the layer-by-layer growth mode. Rutherford back-scattering spectrometry (RBS), X-Ray diffraction (XRD) and Cathodoluminescence (CL) were used to characterize the structural and optical properties of the AlInGaN alloys. The experimental results show that the AlInGaN with appropriate Al cell's temperature, could acquire Al/In ratio near 4.7, then could acquire better crystal and optical quality. The samllest X-ray and CL full-width at half-maximum (FWHM) of the AlInGaN are 5arcmin and 25nm, respectivly. There are some cracks and V-defects occur in high-Al/In-ratio AlInGaN alloys. In the CL image, the cracks and V-defect regions are the emission-enhanced regions. The emission enhancement of the cracked and V-defect regions may be related to the In-segregation.

Paper Details

Date Published: 18 November 2008
PDF: 8 pages
Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71350U (18 November 2008); doi: 10.1117/12.804326
Show Author Affiliations
Baozhu Wang, Hebei Univ. of Science and Technology (China)
Institute of Semiconductors (China)
Tao An, Hebei Univ. of Science and Technology (China)
Huanming Wen, Hebei Univ. of Science and Technology (China)
Ruihong Wu, Hebei Univ. of Science and Technology (China)
Shengbiao An, Hebei Univ. of Science and Technology (China)
Xiuqing Zhang, Hebei Univ. of Science and Technology (China)
Xiaoliang Wang, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 7135:
Optoelectronic Materials and Devices III
Yi Luo; Jens Buus; Fumio Koyama; Yu-Hwa Lo, Editor(s)

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