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Proceedings Paper

Epitaxial Lateral Overgrowth of GaN-based Light Emitting Diodes on SiO2 Nanorod-Array Patterned Sapphire Substrates by MOCVD
Author(s): C. H. Chiu; C. L. Chao; M. H. Lo; Y. J. Cheng; H. C. Kuo; P. C. Yu; T. C. Lu; S. C. Wang; K. M. Lau
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Paper Abstract

High efficiency GaN-based light-emitting diodes (LEDs) are demonstrated by a nanoscale epitaxial lateral overgrowth (NELO) method on a SiO2 nanorod-array patterned sapphire substrate (NAPSS). The SiO2 NAPSS was fabricated by a self-assembled Ni nano clusters and reactive ion etching. The average diameter and density of the formed SiO2 nanorod-array was about 100 to 150 nm and 3 x 109 cm-2. The transmission electron microscopy images suggest that the voids between SiO2 nanorods and the stacking faults introduced during the NELO of GaN can effectively suppress the threading dislocation density. The output power and external quantum efficiency of the fabricated LED by NELO method on NAPSS were enhanced by 52% and 56% respectively, compared to those of a conventional LED. The improvements originated from both the enhanced light extraction assisted by the NAPSS, and the reduced dislocation densities using the NELO method.

Paper Details

Date Published: 18 November 2008
PDF: 7 pages
Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71351Z (18 November 2008); doi: 10.1117/12.804291
Show Author Affiliations
C. H. Chiu, National Chiao Tung Univ. (Taiwan)
C. L. Chao, National Chiao Tung Univ. (Taiwan)
M. H. Lo, National Chiao Tung Univ. (Taiwan)
Y. J. Cheng, Academia Sinica (Taiwan)
H. C. Kuo, National Chiao Tung Univ. (Taiwan)
P. C. Yu, National Chiao Tung Univ. (Taiwan)
T. C. Lu, National Chiao Tung Univ. (Taiwan)
S. C. Wang, National Chiao Tung Univ. (Taiwan)
K. M. Lau, Hong Kong Univ. of Science and Technology (Hong Kong China)

Published in SPIE Proceedings Vol. 7135:
Optoelectronic Materials and Devices III
Yi Luo; Jens Buus; Fumio Koyama; Yu-Hwa Lo, Editor(s)

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