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Proceedings Paper

Strain relaxation characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling
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Paper Abstract

A free-standing nanopillar with a diameter of 300 nm, and a height of 2 μm is successfully demonstrated by focused ion beam milling. The measured micro-photoluminescence (μ-PL) from the embedded InGaN/GaN multiple quantum wells shows a blue shift of 68 meV in energy with a broadened full-width at half maximum, ~200meV. Calculations based on the valence force field method suggest that the spatial variation of the strain tensors in the nanopillar results in the observed energy shift and spectrum broadening. Moreover, the power-dependent µ-PL measurement confirms that the strain-relaxed emission region of the nanopillar exhibits a higher radiative recombination rate than that of the as-grown structure, indicating great potential for realizing high-efficiency nano devices in the UV/blue wavelength range.

Paper Details

Date Published: 18 November 2008
PDF: 6 pages
Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71351Y (18 November 2008); doi: 10.1117/12.804065
Show Author Affiliations
Peichen Yu, National Chiao Tung Univ. (Taiwan)
Min-An Tsai, National Chiao Tung Univ. (Taiwan)
Ching-Hua Chiu, National Chiao Tung Univ. (Taiwan)
Hao-chung Kuo, National Chiao Tung Univ. (Taiwan)
Yuh-Renn Wu, National Taiwan Univ. (Taiwan)

Published in SPIE Proceedings Vol. 7135:
Optoelectronic Materials and Devices III
Yi Luo; Jens Buus; Fumio Koyama; Yu-Hwa Lo, Editor(s)

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