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Proceedings Paper

Surface charge lithography for GaN micro- and nanostructuring
Author(s): Ion M. Tiginyanu; Veaceslav Popa; Andrei Sarua; Peter J. Heard; Olesea Volciuc; Martin Kuball
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Paper Abstract

We demonstrate the possibility for controlled micro- and nanostructuring of GaN layers by low-dose focused-ion-beam (FIB) treatment with subsequent photoelectrochemical (PEC) etching. The proposed novel maskless approach based on ultra-fast direct writing of surface negative charge that shields the material against PEC etching allows one to fabricate GaN nanowalls and nanowires with lateral dimensions as small as 100 nm. Compared with commonly used lithography masks and/or FIB etching approaches for patterning GaN, the surface charge lithography enables one to fabricate high-aspect ratio micro- and nanostructures and mitigates the need for additional mask layers on the surface prior to etching, and is much faster than FIB etching alone reducing furthermore the ion exposure of material and therefore reducing ion beam damage. We show, in particular, the possibility to etch voids in between structures as narrow as 200 nm and to fabricate GaN suspended membranes and sub-micrometer hollow squares with the thickness defined by the main projection range of implanted ions. The obtained results demonstrate the feasibility of maskless device fabrication based on low-dose FIB direct writing with subsequent wet etching.

Paper Details

Date Published: 18 February 2009
PDF: 8 pages
Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72160Y (18 February 2009); doi: 10.1117/12.803679
Show Author Affiliations
Ion M. Tiginyanu, Technical Univ. of Moldova (Moldova)
Institute of Electronic Engineering and Industrial Technologies (Moldova)
Veaceslav Popa, Technical Univ. of Moldova (Moldova)
Andrei Sarua, Univ. of Bristol (United Kingdom)
Peter J. Heard, Interface Analysis Ctr. (United Kingdom)
Olesea Volciuc, Technical Univ. of Moldova (Moldova)
Martin Kuball, Univ. of Bristol (United Kingdom)

Published in SPIE Proceedings Vol. 7216:
Gallium Nitride Materials and Devices IV
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Joachim Piprek; Euijoon Yoon, Editor(s)

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