According to the 2007 edition of the ITRS roadmap, the requirement for CD uniformity of isolated lines on a binary or attenuated phase shift mask is 2.1nm (3σ) in 2008 and requires improvement to1.3 nm (3σ) in 2010. In order to meet the increasing demand for CD uniformity on photo masks, improved CD metrology is required. A next generation AFM, InSight^TM 3DAFM, has been developed to meet these increased requirements for advanced photo mask metrology. The new system achieves 2X improvement in CD and depth precision on advanced photo masks features over the previous generation 3D-AFM. This paper provides measurement data including depth, CD, and sidewall angle metrology. In addition the unique capabilities of damage-free defect inspection and Nanoimprint characterization by 3D AFM are presented.

Date Published: 17 October 2008
PDF: 11 pages
Proc. SPIE 7122, Photomask Technology 2008, 71222X (17 October 2008); doi: 10.1117/12.803581

Published in SPIE Proceedings Vol. 7122:
Photomask Technology 2008
Hiroichi Kawahira; Larry S. Zurbrick, Editor(s)