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Proceedings Paper

Influence of annealing environment on the hydrogen related bonding structure in silicon nitride thin films containing silicon nanoparticles
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Paper Abstract

The Si-rich SiNx:H films have been prepared by helicon wave plasma-enhanced chemical vapor deposition (HWP-CVD) technique. Parts of the samples have been post-annealed at 800 °C in the H2, FG (10%H2 in N2), and N2 ambient, respectively. Fourier transform infrared spectroscopy (FTIR) and the optical absorption spectroscopy have been used to investigate the influence of different annealing environment on the structural and optical properties of the films. After the thermal annealing process, there is a significant increase of Si-N bonding density. Meanwhile, the band related to hydrogen (N-H and Si-H) decreased which indicates that the hydrogen is effused out of the films during the annealing treatment. The Si-sH stretching vibrations can be divided into three components by Gaussian distribution; the Si-H absorption band at different wave numbers corresponds to different configurations. The changes of the three peaks contributions decreased indicate that the configurations of the Si-H stretching vibrations band occurs restructuring in the different annealing environments. Furthermore, the investigation of the optical absorption spectroscopy suggests that the band gap Eg decreased after the thermal annealing process. The decreased optical gap should be related to the loss of hydrogen and the slightly increase in the mean size of silicon nanoparticles, which is in good agreement with that of the hydrogen bonding structure.

Paper Details

Date Published: 18 November 2008
PDF: 8 pages
Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71353X (18 November 2008); doi: 10.1117/12.803448
Show Author Affiliations
Wenge Ding, Hebei Univ. (China)
Wenhao Qi, Hebei Univ. (China)
Wanbing Lu, Hebei Univ. (China)
Zicai Zhang, Hebei Univ. (China)
Wei Yu, Hebei Univ. (China)
Guangsheng Fu, Hebei Univ. (China)

Published in SPIE Proceedings Vol. 7135:
Optoelectronic Materials and Devices III
Yi Luo; Jens Buus; Fumio Koyama; Yu-Hwa Lo, Editor(s)

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