Recently, high-Al-content AlGaN alloy systems have attracted increasing attention, and it is urgent and important to achieve excellent Ohmic contacts with low specific contact resistivity, good thermally stability, clear borderline and smooth surface morphology of this alloy systems to optimize the performance of photoelectric devices. In the experiment, we found that surface disordered layer and oxides including native oxide could be removed by boiling KOH solution. The surface status of both samples was evaluated with scanning electron microscope (SEM) and X-ray photoelectron spectra (XPS). For comparison, then A Ti/Al/Ti/Au multilayer was deposited on the samples with and without wet chemical etching to observe their electric properties. After annealing, I-Vcharacteristics via Keyley236 electric analyzer was measured. Ohmic contacts with the contact specific resistivity of 6.55×10^-4Ωcm² were obtained between treated samples and the multi-metals. However, nonlinear I-V curves indicated that the contact on the untreated sample was still the Schottky contact.

Date Published: 18 November 2008
PDF: 9 pages
Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71350G (18 November 2008);

Published in SPIE Proceedings Vol. 7135:
Optoelectronic Materials and Devices III
Yi Luo; Jens Buus; Fumio Koyama; Yu-Hwa Lo, Editor(s)