
Proceedings Paper
The effect of wet chemical etching by KOH solution to the contact on the solar-blind Al0.65Ga0.35N materialFormat | Member Price | Non-Member Price |
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Paper Abstract
Recently, high-Al-content AlGaN alloy systems have attracted increasing attention, and it is urgent and
important to achieve excellent Ohmic contacts with low specific contact resistivity, good thermally stability, clear
borderline and smooth surface morphology of this alloy systems to optimize the performance of photoelectric
devices. In the experiment, we found that surface disordered layer and oxides including native oxide could be
removed by boiling KOH solution. The surface status of both samples was evaluated with scanning electron
microscope (SEM) and X-ray photoelectron spectra (XPS). For comparison, then A Ti/Al/Ti/Au multilayer was
deposited on the samples with and without wet chemical etching to observe their electric properties. After annealing,
I-Vcharacteristics via Keyley236 electric analyzer was measured. Ohmic contacts with the contact specific resistivity
of 6.55×10-4Ωcm2 were obtained between treated samples and the multi-metals. However, nonlinear I-V curves
indicated that the contact on the untreated sample was still the Schottky contact.
Paper Details
Date Published: 18 November 2008
PDF: 9 pages
Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71350G (18 November 2008); doi: 10.1117/12.803293
Published in SPIE Proceedings Vol. 7135:
Optoelectronic Materials and Devices III
Yi Luo; Jens Buus; Fumio Koyama; Yu-Hwa Lo, Editor(s)
PDF: 9 pages
Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71350G (18 November 2008); doi: 10.1117/12.803293
Show Author Affiliations
Published in SPIE Proceedings Vol. 7135:
Optoelectronic Materials and Devices III
Yi Luo; Jens Buus; Fumio Koyama; Yu-Hwa Lo, Editor(s)
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