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Proceedings Paper

Analysis and simulation of process parameters for epitaxy of InP-based compound semiconductor materials
Author(s): Shuquan Zhong; Xiaomin Ren; Yongqing Huang; Qi Wang; Hui Huang
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Paper Abstract

Under a wide range of process parameters, such as varying total flow rate of gas inlet, chamber pressure, growth temperature, wafer carrier rotation, it has been finally obtained the favorable conditions of the better uniform distributions of steady flow and thermal field profiles for growing high quality compound semiconductor materials inside the reactor. Then, the long- wavelength metamorphic In0.53Ga0.47As PIN photodetectors grown on semi-insulating GaAs substrates are successfully demonstrated by low temperature InP buffer technology. The active area of this photodetector is 50μm×50μm and the thickness of In0.53Ga0.47As adsorption layer is 300 nm. The 3dB bandwidth of frequency response reaches 6GHz. The responsivity of 0.12 A/W to 1550 nm optical radiation, corresponding to the external quantum efficiency of 9.6%, was achieved.

Paper Details

Date Published: 18 November 2008
PDF: 10 pages
Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71353M (18 November 2008); doi: 10.1117/12.803262
Show Author Affiliations
Shuquan Zhong, Beijing Univ. of Posts and Telecommunications (China)
Xiaomin Ren, Beijing Univ. of Posts and Telecommunications (China)
Yongqing Huang, Beijing Univ. of Posts and Telecommunications (China)
Qi Wang, Beijing Univ. of Posts and Telecommunications (China)
Hui Huang, Beijing Univ. of Posts and Telecommunications (China)

Published in SPIE Proceedings Vol. 7135:
Optoelectronic Materials and Devices III
Yi Luo; Jens Buus; Fumio Koyama; Yu-Hwa Lo, Editor(s)

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