Proceedings Paper
Photoluminescence properties of rare-earth doped Si-based films materials| Format | Member Price | Non-Member Price |
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Paper Abstract
The photoluminescence (PL) spectra at room temperature for the silicon-based samples doped by Nd by ion implantation
are measured. The results show that all the samples possess blue-violet photoluminescence properties under the
ultraviolet light excitation and its light emission is stable. The intensity of PL spectra is closely relative to the dose of
implantation and to the temperature of thermal annealing.The above samples were treated by anodization method. The
PL spectra of porous samples which were treated by HNO3 were measured. The results show light emission efficiency
of the porous samples that were treated by electro-chemical anodization etch and HNO3 is higher than those of ordinary
PS samples under the same measuring conditions.
Paper Details
Date Published: 18 November 2008
PDF: 4 pages
Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71353D (18 November 2008); doi: 10.1117/12.803073
Published in SPIE Proceedings Vol. 7135:
Optoelectronic Materials and Devices III
Yi Luo; Jens Buus; Fumio Koyama; Yu-Hwa Lo, Editor(s)
PDF: 4 pages
Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71353D (18 November 2008); doi: 10.1117/12.803073
Show Author Affiliations
Xinli Leng, Nanchang Univ. (China)
Published in SPIE Proceedings Vol. 7135:
Optoelectronic Materials and Devices III
Yi Luo; Jens Buus; Fumio Koyama; Yu-Hwa Lo, Editor(s)
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