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Proceedings Paper

Reactive ion etching of ZnO using the H2/CH4 and H2/CH4/Ar mixtures
Author(s): Kuang-Po Hsueh; Ren-Jie Hou; Cheng-Huang Kuo; Chun-Ju Tun
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Paper Abstract

This work investigates the reactive ions etching (RIE) physical properties of n-type ZnO using H2/CH4 and H2/CH4/Ar mixtures by varying the gas flow ratio, the radio-frequency (rf) plasma power and the chamber pressure. Atomic force microscopy (AFM) results and surface topographies are discussed. Although the etching rate of the n-ZnO at an H2/CH4 flow rate of 100/0 sccm, a work pressure of 100 mTorr and an rf power of 300 W is lower than under any other conditions, the rms roughness of 43.78 nm is the highest, and supports the application of roughened transparent contact layer (TCL) in light-emitting diodes (LEDs). The dynamics associated with the high etching rate were highly efficient at an H2/CH4/Ar flow rate of 38/5/57 sccm, a work pressure of 150 mTorr and an rf power of 300 W. In addition, the ZnO with thermal annealing were studied. The slower etching rate of annealed n-ZnO is observed due to an increase the crystal quality of the ZnO films after thermal annealing which consists with the x-ray diffraction (XRD) results.

Paper Details

Date Published: 18 November 2008
PDF: 8 pages
Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71350D (18 November 2008); doi: 10.1117/12.802840
Show Author Affiliations
Kuang-Po Hsueh, Vanung Univ. (Taiwan)
Ren-Jie Hou, National Central Univ. (Taiwan)
Cheng-Huang Kuo, National Central Univ. (Taiwan)
Chun-Ju Tun, National Central Univ. (Taiwan)

Published in SPIE Proceedings Vol. 7135:
Optoelectronic Materials and Devices III
Yi Luo; Jens Buus; Fumio Koyama; Yu-Hwa Lo, Editor(s)

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