Share Email Print

Proceedings Paper

Effects of photo resist erosion in development on critical dimension performance for 45nm node and below
Author(s): Guen-Ho Hwang; Dong-Hyun Kim; Chu-bong Yu; Byeng-Sun Kang; Ik-Boum Hur; Cheol Shin; Sung-Mo Jung; Sang-Soo Choi
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

In previous study, it has been reported that photo resist erosion after development gets severe as patterns size decreases. The 60nm feature requiring for SRAF(Sub Resolution Assistant Feature) of 45nm technology node, the photo resist erosion after develop on unexposed area was almost 400Å. It will be a serious problem to degrade not only the resist thickness margin for thinner resist to enhance resolution and pattern collapse, but also CD(Critical Dimension) performance capability such as CD linearity and SRAF resolution capability by proceeding dry etching. In this paper, the effects of photo resist erosion by pattern size on CD linearity performance were studied. The photo resist erosion by pattern size was simulated with the Gaussian blur model before dry etching. The effects of dosage, PEB(Post Exposure Bake) temperature and development conditions were evaluated to reduce blur value before dry etching.

Paper Details

Date Published: 17 October 2008
PDF: 10 pages
Proc. SPIE 7122, Photomask Technology 2008, 71223A (17 October 2008); doi: 10.1117/12.802741
Show Author Affiliations
Guen-Ho Hwang, PKL (Korea, Republic of)
Dong-Hyun Kim, PKL (Korea, Republic of)
Chu-bong Yu, PKL (Korea, Republic of)
Byeng-Sun Kang, PKL (Korea, Republic of)
Ik-Boum Hur, PKL (Korea, Republic of)
Cheol Shin, PKL (Korea, Republic of)
Sung-Mo Jung, PKL (Korea, Republic of)
Sang-Soo Choi, PKL (Korea, Republic of)

Published in SPIE Proceedings Vol. 7122:
Photomask Technology 2008
Hiroichi Kawahira; Larry S. Zurbrick, Editor(s)

© SPIE. Terms of Use
Back to Top