Share Email Print

Proceedings Paper

Terahertz wave dielectric properties of P-type silicon
Author(s): Jiusheng Li; Jianrui Li; Xiaoli Zhao
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

We have measured the absorption spectrum of three kind resistivity p-type silicons by backward-wave oscillator (BWO).The absorption spectrum is examined and analyzed by least square method. The refractive index, absorption coefficient, and dielectric functions of various resistivity p-type silicons are obtained in the frequency range extending from 0.23 THz to 0.375 THz. The experimental results indicate that the absorption coefficient of the p-type silicons are decreased with the resistivity increase and its least absorption coefficient equals 3.87x10-4 cm-1. Our results demonstrate that the applicability of the backward-wave oscillator THz absorption spectroscopy to p-type silicon characteristic analysis by calculating the absorption spectra. This work establishes the basic spectra data for the various resistivity ptype silicons are very significative to design the terahertz waveguide with low loss.

Paper Details

Date Published: 18 November 2008
PDF: 6 pages
Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71351L (18 November 2008); doi: 10.1117/12.802557
Show Author Affiliations
Jiusheng Li, China Jiliang Univ. (China)
Jianrui Li, China Jiliang Univ. (China)
Xiaoli Zhao, China Jiliang Univ. (China)

Published in SPIE Proceedings Vol. 7135:
Optoelectronic Materials and Devices III
Yi Luo; Jens Buus; Fumio Koyama; Yu-Hwa Lo, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?