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Proceedings Paper

Comparative analysis of pseudo-potential and tight-binding band structure calculations with an analytical two-band k-p model: conduction band of silicon
Author(s): Viktor A. Sverdlov; Hans Kosina; Siegfried Selberherr
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Paper Abstract

An analytical two-band k•p model for the conduction band of silicon is compared with the numerical nonlocal empirical pseudo-potential method and the sp3d5s* nearest-neighbor tight-binding model. The two-band k•p model gives results consistent with the empirical pseudo-potential method and describes the conduction band structure accurately. The tight-binding model overestimates the gap between the two lowest conduction bands at the valley minima, which results in an underestimation of the non-parabolicity effects. When shear strain is introduced, the two-band k•p model predicts an analytical expression for the strain-dependence of the band structure, which is in good agreement with results of pseudo-potential simulations.

Paper Details

Date Published: 29 April 2008
PDF: 8 pages
Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70251I (29 April 2008); doi: 10.1117/12.802503
Show Author Affiliations
Viktor A. Sverdlov, Technische Univ. Wien (Austria)
State Univ. of St. Petersburg (Russia)
Hans Kosina, Technische Univ. Wien (Austria)
Siegfried Selberherr, Technische Univ. Wien (Austria)

Published in SPIE Proceedings Vol. 7025:
Micro- and Nanoelectronics 2007
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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