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Proceedings Paper

Method of creation of monomolecular transistor with overhanging electrodes
Author(s): I. V. Sapkov; E. S. Soldatov; V. G. Elensky
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Paper Abstract

Method of creation of nanogaps between metallic (Au) thin-film electrodes using additional evaporation of metal film on relatively wide preliminary created gap is elaborated and realized. A technique of electrodes "overhanging" by dry etching of a substrate is suggested and realized. Optimal etching parameters are found as well. A technique of limitation of the region for additional metal deposition by special additional PMMA mask with narrow window along line of gaps is suggested and realized. It allows a minimization of probability of parasitic gap shunting. It is shown that elaborated method permits iterative approach to prescribed size of a gap by both decreasing of the gap width by deposition of additional metal on the walls of a wide gap and reconstruction of a gap by electromigration in the case of closing of the gap due to excessive metal deposition. Samples with gap's width less than 10 nm were obtained by such reconstruction of a gap.

Paper Details

Date Published: 29 April 2008
PDF: 8 pages
Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70250P (29 April 2008); doi: 10.1117/12.802415
Show Author Affiliations
I. V. Sapkov, Moscow State Univ. (Russia)
E. S. Soldatov, Moscow State Univ. (Russia)
V. G. Elensky, Moscow State Univ. (Russia)

Published in SPIE Proceedings Vol. 7025:
Micro- and Nanoelectronics 2007
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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