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Proceedings Paper

Effects of spatial reproduction at the interference of the electron waves in semiconductor 1D nanostructures with parabolic quantum wells
Author(s): V. A. Petrov; A. V. Nikitin
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Paper Abstract

Effects of spatial inhomogeneity for the probability current density jx (x,z) (or a quantum-mechanical current density ejx (x,z), e is the electron charge) in the semiconductor 1D nanostructures in the form of joints in the direction of propagation of the electron wave (the x-axis) of narrow rectangular and wide parabolic (on the z-axis) quantum wires (QWRs) (z-axis is the axis of the quantization) have been theoretically studied. It is assumed that such structures in the 2D electron system is realized. The inhomogeneous distribution of the jx (x,z) arises because of the interference of electron waves spreading in the wide QWR simultaneously in different quantum-confined electron subbands. Special attention is given to effects of spatial reproduction for electron waves in such nanostructures. It is shown that transverse distribution jx (0,z) existing at the entry of the wide QWR is reproduced with some accuracy at a definite distance Χ1 from the joint. This picture is reproduced periodically in cross-sections Χq = qΧ1 (coefficients q are integers). The results of numerical calculations of this effect in symmetric structure and its modification in asymmetric (on the z-axis) nanostructure are given. It is shown, in particular, that in asymmetric structures the inverse behavior of probability of the detection of a particle in the quantum-confined subband of the wide QWR from the number of the subband is probable.

Paper Details

Date Published: 29 April 2008
PDF: 9 pages
Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70250O (29 April 2008); doi: 10.1117/12.802414
Show Author Affiliations
V. A. Petrov, Institute of Radio Engineering and Electronics (Russia)
A. V. Nikitin, Institute of Radio Engineering and Electronics (Russia)

Published in SPIE Proceedings Vol. 7025:
Micro- and Nanoelectronics 2007
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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