Proceedings Paper
Measurement of atomic hydrogen flow density during GaAs surface cleaning| Format | Member Price | Non-Member Price |
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Paper Abstract
The eight-channel thin-film resistive sensor of atomic hydrogen which in the automated mode allows to measure
hydrogen atoms flow density in atomic-molecular mix in conditions of the low gas pressure (10-2-10-4 Pa) and under
action of infra-red and visible radiation noises is described. The sensor can be used for measurement of AH flow density
distribution on the large cross-section beam, including measurement during GaAs surface cleaning. The measurement
range of atoms flow density is 5×1013-1016 at.cm-2s-1 and measurement time is 1-10 minutes. The resistor of the sensor is
produced by microelectronics planar technology that provides an opportunity of the high space resolution at beam spatial
distributions measurement.
Paper Details
Date Published: 29 April 2008
PDF: 7 pages
Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70250A (29 April 2008); doi: 10.1117/12.802357
Published in SPIE Proceedings Vol. 7025:
Micro- and Nanoelectronics 2007
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)
PDF: 7 pages
Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70250A (29 April 2008); doi: 10.1117/12.802357
Show Author Affiliations
V. A. Kagadei, Institute of High Current Electronics (Russia)
E. V. Nefyodtsev, Institute of High Current Electronics (Russia)
E. V. Nefyodtsev, Institute of High Current Electronics (Russia)
D. I. Proskurovski, Institute of High Current Electronics (Russia)
S. V. Romanenko, Institute of High Current Electronics (Russia)
S. V. Romanenko, Institute of High Current Electronics (Russia)
Published in SPIE Proceedings Vol. 7025:
Micro- and Nanoelectronics 2007
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)
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