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Proceedings Paper

Measurement of atomic hydrogen flow density during GaAs surface cleaning
Author(s): V. A. Kagadei; E. V. Nefyodtsev; D. I. Proskurovski; S. V. Romanenko
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Paper Abstract

The eight-channel thin-film resistive sensor of atomic hydrogen which in the automated mode allows to measure hydrogen atoms flow density in atomic-molecular mix in conditions of the low gas pressure (10-2-10-4 Pa) and under action of infra-red and visible radiation noises is described. The sensor can be used for measurement of AH flow density distribution on the large cross-section beam, including measurement during GaAs surface cleaning. The measurement range of atoms flow density is 5×1013-1016 and measurement time is 1-10 minutes. The resistor of the sensor is produced by microelectronics planar technology that provides an opportunity of the high space resolution at beam spatial distributions measurement.

Paper Details

Date Published: 29 April 2008
PDF: 7 pages
Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70250A (29 April 2008); doi: 10.1117/12.802357
Show Author Affiliations
V. A. Kagadei, Institute of High Current Electronics (Russia)
E. V. Nefyodtsev, Institute of High Current Electronics (Russia)
D. I. Proskurovski, Institute of High Current Electronics (Russia)
S. V. Romanenko, Institute of High Current Electronics (Russia)

Published in SPIE Proceedings Vol. 7025:
Micro- and Nanoelectronics 2007
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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