
Proceedings Paper
Focused ion beam source of a new type for micro- and nanoelectronics technologiesFormat | Member Price | Non-Member Price |
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Paper Abstract
A focused ion beam source of a new type is suggested for the first time. The original design of this source is based on the
using of both a laser ablation and an advanced ion beam buffer gas cooling technique. Operation of the new ion beam
source has been studied by means of computer experiments. For this purpose, detailed gas dynamic simulations based on
the solution of a full system of time-dependent Navier-Stokes equations have been performed for both a conical
supersonic nozzle having an inner tube on the axis and a novel RF-funnel extraction system. The results of gas dynamic
calculations were used for detailed microscopic Monte Carlo ion-beam trajectory simulations under the combined effect
of the buffer gas flow and electric fields of the RF-funnel. The obtained results made it apparent that the suggested ion
beam source looks very promising for the use in the micro- and nanoelectronics technologies.
Paper Details
Date Published: 29 April 2008
PDF: 12 pages
Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702509 (29 April 2008); doi: 10.1117/12.802356
Published in SPIE Proceedings Vol. 7025:
Micro- and Nanoelectronics 2007
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)
PDF: 12 pages
Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702509 (29 April 2008); doi: 10.1117/12.802356
Show Author Affiliations
V. L. Varentsov, V.G. Khlopin Radium Institute (Russia)
Published in SPIE Proceedings Vol. 7025:
Micro- and Nanoelectronics 2007
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)
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