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Proceedings Paper

Biopolymer-based gate dielectric for organic field effect transistors
Author(s): Kalluri R. Sarma; Sonia Dodd; Charles Chanley; Jerry Roush; N. Serdar Sariciftci; Rajesh R. Naik; James G. Grote
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Paper Abstract

Organic field effect transistors (O-FETs) are of considerable interest for the development of flexible displays and a variety of other macro-electronic applications. We investigated a DNA-based biopolymer material as a gate dielectric for fabricating O-FET backplanes using the organic semiconductor material Pentacene having small geometry devices and improved performance characteristics required for high resolution displays. The results to date continue to show the potential of this approach for low-cost O-FET backplanes for the next generation flexible displays and other macro-electronic applications.

Paper Details

Date Published: 15 October 2008
PDF: 10 pages
Proc. SPIE 7118, Optical Materials in Defence Systems Technology V, 71180L (15 October 2008); doi: 10.1117/12.801708
Show Author Affiliations
Kalluri R. Sarma, Honeywell International (United States)
Sonia Dodd, Honeywell International (United States)
Charles Chanley, Honeywell International (United States)
Jerry Roush, Honeywell International (United States)
N. Serdar Sariciftci, Johannes Kepler Univ. (Austria)
Rajesh R. Naik, Air Force Research Lab. (United States)
James G. Grote, Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 7118:
Optical Materials in Defence Systems Technology V
James G. Grote; Francois Kajzar; Mikael Lindgren, Editor(s)

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