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Proceedings Paper

Reflective interferometer for investigation of amplitude-phase characteristics of semiconductor nanostructures
Author(s): A. A. Kovalyov; M. A. Putyato; V. V. Preobrazhenskii; O. P. Pchelyakov; N. N. Rubtsova
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Paper Abstract

The reflective interferometer is suggested to use in measurements of spectral dependence of the phase of the reflectivity of mirrors, manufactured on a base of multi-layer semiconductor nanostructures. Interferometer is tested on the semiconductor mirror used to start the mode self-synchronization regime of the laser Nd3+:KGd(WO4)2. The technique can be applied to a wide variety of radiation wavelength, and it shows higher sensitivity of the phase characteristics measurement as compared to traditional two-beam interferometers.

Paper Details

Date Published: 17 April 2008
PDF: 6 pages
Proc. SPIE 7024, International Workshop on Quantum Optics 2007, 70240N (17 April 2008); doi: 10.1117/12.801691
Show Author Affiliations
A. A. Kovalyov, Institute of Semiconductor Physics (Russia)
M. A. Putyato, Institute of Semiconductor Physics (Russia)
V. V. Preobrazhenskii, Institute of Semiconductor Physics (Russia)
O. P. Pchelyakov, Institute of Semiconductor Physics (Russia)
N. N. Rubtsova, Institute of Semiconductor Physics (Russia)

Published in SPIE Proceedings Vol. 7024:
International Workshop on Quantum Optics 2007
Vitaly V. Samartsev, Editor(s)

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