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Proceedings Paper

Integrating Cr and MoSi etch for optimal photomask critical dimension uniformity and phase uniformity
Author(s): Richard Wistrom; Toru Komizo; Satoru Nemoto; A. Gary Reid
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Paper Abstract

Two key parameters of attenuated phase shift masks are critical dimension uniformity (CDU) and phase uniformity. This study examines the important role that plasma etch plays in determining these parameters. For optimal results, the impact which Cr and MoSi etch have on uniformity must be understood not only individually, but also as a complementary pair. A two-step MoSi etch was developed; the first step was tuned to have a higher etch bias at the edge than at the center, while the second step had a very uniform etch bias. By controlling the fraction of the MoSi consumed by each step, the MoSi etch was adapted to complement the Cr etch and thus optimize overall CDU and phase uniformity.

Paper Details

Date Published: 17 October 2008
PDF: 9 pages
Proc. SPIE 7122, Photomask Technology 2008, 71220F (17 October 2008); doi: 10.1117/12.801570
Show Author Affiliations
Richard Wistrom, IBM System and Technology Group (United States)
Toru Komizo, Toppan Photomasks, Inc. (United States)
Satoru Nemoto, Toppan Photomasks, Inc. (United States)
A. Gary Reid, IBM System and Technology Group (United States)

Published in SPIE Proceedings Vol. 7122:
Photomask Technology 2008
Hiroichi Kawahira; Larry S. Zurbrick, Editor(s)

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