
Proceedings Paper
Assist feature aware double patterning decompositionFormat | Member Price | Non-Member Price |
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$17.00 | $21.00 |
Paper Abstract
Double patterning has gained prominence as the most likely lithographic methodology to help keep Moore's law going
towards 32nm 1/2 pitch lithography. While solutions, to date, have focused mainly on gap splitting to avoid minimum
spacing violations, the decomposition should, ideally, also attempt to optimize the process window of the decomposed
masks. A major contributor to process window sensitivity is the correct placement of sub-resolvable assist features.
These features are placed once the polygons of each mask are defined, i.e. post decomposition. If some awareness of this
downstream process step is made available to the double patterning decomposition stage, then a more robust
decomposition can be achieved.
Paper Details
Date Published: 17 October 2008
PDF: 9 pages
Proc. SPIE 7122, Photomask Technology 2008, 712224 (17 October 2008); doi: 10.1117/12.801562
Published in SPIE Proceedings Vol. 7122:
Photomask Technology 2008
Hiroichi Kawahira; Larry S. Zurbrick, Editor(s)
PDF: 9 pages
Proc. SPIE 7122, Photomask Technology 2008, 712224 (17 October 2008); doi: 10.1117/12.801562
Show Author Affiliations
Gerard Luk-Pat, Synopsys, Inc. (United States)
Published in SPIE Proceedings Vol. 7122:
Photomask Technology 2008
Hiroichi Kawahira; Larry S. Zurbrick, Editor(s)
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