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Proceedings Paper

Pattern placement correction due to bending in EUVL masks
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Paper Abstract

Extreme Ultraviolet Lithography (EUVL) masks have residual stress induced by several thin films on low thermal expansion material (LTEM) substrates. The stressed thin films finally result in convex out-of-plane displacement (OPD) of several 100s of nm on the pattern side of the mask. Since EUVL masks are chucked on EUVL scanners differently from on e-beam writer, the mask pattern placement errors (PPE) are necessary to be corrected for to reduce overlay errors. In this paper, experimental results of pattern placement error correction using standard chrome on glass (COG) plate will be discussed together with simulations. Excellent agreement with simple bending theory is obtained. Suitability of the model to compensate for other EUVL-related PPEs due to mask non-flatness will be discussed.

Paper Details

Date Published: 17 October 2008
PDF: 11 pages
Proc. SPIE 7122, Photomask Technology 2008, 71222C (17 October 2008); doi: 10.1117/12.801542
Show Author Affiliations
Seh-Jin Park, Intel Corp. (United States)
Chandhok Manish, Intel Corp. (United States)
Marilyn Kamna, Intel Corp. (United States)
Chuan Hu, Intel Corp. (United States)
Guojing Zhang, Intel Corp. (United States)
Fabian C. Martinez, Intel Corp. (United States)
Nathan Wilcox, Intel Corp. (United States)
Kamgmin Hsia, Intel Corp. (United States)
Alan R. Stivers, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 7122:
Photomask Technology 2008
Hiroichi Kawahira; Larry S. Zurbrick, Editor(s)

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