Proceedings Paper
70nm DRAM intra-field CDU improvement by dose modulation on mask transmittance| Format | Member Price | Non-Member Price |
|---|---|---|
| $17.00 | $21.00 |
Paper Abstract
DRAM intra-field CD uniformity (CDU) demand becomes more crucial with pattern size shrink and wafer die or
memory size expanding. Intra-field CDU error mainly comes from mask CD error, scanner exposure and wafer process.
This study makes use of a method to extract systematic CDU error from multi-field CDU results. Based on the
information of the systematic CDU error, localized mask transmittance modulation is implemented to compensate the
intra-field systematic CDU error on wafer. A focused ultrafast laser beam forms shading elements in mask quartz
substrate. Mask transmittance modulation is controlled by the shading element density variation. This study will
demonstrate the intra-field CDU improvement result, CD modulation calibration validity, CD proximity variation result
and mask inspection result etc.
Paper Details
Date Published: 17 October 2008
PDF: 8 pages
Proc. SPIE 7122, Photomask Technology 2008, 712238 (17 October 2008); doi: 10.1117/12.801417
Published in SPIE Proceedings Vol. 7122:
Photomask Technology 2008
Hiroichi Kawahira; Larry S. Zurbrick, Editor(s)
PDF: 8 pages
Proc. SPIE 7122, Photomask Technology 2008, 712238 (17 October 2008); doi: 10.1117/12.801417
Show Author Affiliations
Tomas Chin, Nanya Technology Corp. (Taiwan)
Wen Bin Wu, Nanya Technology Corp. (Taiwan)
Chiang Lin Shih, Nanya Technology Corp. (Taiwan)
Wen Bin Wu, Nanya Technology Corp. (Taiwan)
Chiang Lin Shih, Nanya Technology Corp. (Taiwan)
Published in SPIE Proceedings Vol. 7122:
Photomask Technology 2008
Hiroichi Kawahira; Larry S. Zurbrick, Editor(s)
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