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Proceedings Paper

Smoothing based model for images of buried EUV multilayer defects near absorber features
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Paper Abstract

A modification has been made to the fast simulator RADICAL which allows it to simulate the reflected field from an EUV mask with a buried defect 15,000 times faster than the finite difference time domain method (FDTD). This new version uses an advanced single surface approximation (SSA) instead of ray tracing to model the defective multilayer stack. RADICAL with SSA can simulate a 32nm line space pattern with a buried defect in 4.0s. The accuracy of this method is verified with comparisons to FDTD simulations and good agreement is shown. The ability of this method to simulate large layouts with arbitrary defects is demonstrated. A 1.5μm x 1.5μm layout with an arbitrary buried defect and multilayer surface roughness is simulated in 75s. An alternative algebraic fast model for buried defects near absorber lines is also investigated based on the linear relationship between the surface height of isolated buried defects and the aerial image dip strength. However, the interaction is shown to be too complicated for accurate representation with the model proposed.

Paper Details

Date Published: 17 October 2008
PDF: 6 pages
Proc. SPIE 7122, Photomask Technology 2008, 71221X (17 October 2008); doi: 10.1117/12.801311
Show Author Affiliations
Chris H. Clifford, Univ. of California, Berkeley (United States)
Andrew R. Neureuther, Univ. of California, Berkeley (United States)

Published in SPIE Proceedings Vol. 7122:
Photomask Technology 2008
Hiroichi Kawahira; Larry S. Zurbrick, Editor(s)

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