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Proceedings Paper

Pixel-based SRAF implementation for 32nm lithography process
Author(s): Byung-Sung Kim; Yoo-Hyun Kim; Sung-Ho Lee; Sung-Il Kim; Sang-Rok Ha; Juhwan Kim; Alexander Tritchkov
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Paper Abstract

A Pixel-based sub-resolution assist feature (SRAF) insertion technique has been considered as one of the promising solutions by maximizing the common process window. However, process window improvement of the pixel-based SRAF technique is limited by the simplification of SRAFs for mask manufacturability. Mask simplification and mask rule check (MRC) constraints parameters for pixel-based SRAF technique are the critical factors for mask production without a big loss of its benefit. In this study, correlation of MRC control was analyzed in terms of the robustness to process variation for a contact layer of 32nm device node. An optimum condition of MRC constraints was selected by balancing the process window and mask manufacturability. In addition, a novel and practical methodology for 32nm device node development was proposed to keep the mask complexity low and to take full advantage of process window improvement using pixel-base SRAF insertion.

Paper Details

Date Published: 17 October 2008
PDF: 11 pages
Proc. SPIE 7122, Photomask Technology 2008, 71220T (17 October 2008); doi: 10.1117/12.801310
Show Author Affiliations
Byung-Sung Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Yoo-Hyun Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sung-Ho Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sung-Il Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sang-Rok Ha, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Juhwan Kim, Mentor Graphics (United States)
Alexander Tritchkov, Mentor Graphics (United States)

Published in SPIE Proceedings Vol. 7122:
Photomask Technology 2008
Hiroichi Kawahira; Larry S. Zurbrick, Editor(s)

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