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Proceedings Paper

Haze acceleration system for photo mask application by using high repetition ArF excimer laser
Author(s): Dae-Jin Kim; Hyun-Jung Kim; Seung-Hwan Eom; Kwang-Jae Lee; Woon-Ki Cho; Sang-Hyun Chung
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Paper Abstract

The defects and contaminants on a photo mask can seriously impact the yield of manufacturing devices in semiconductor and flat panel display fabrication. Actually, as the device size and line width shrink in ultra large scale integrated (ULSI) circuit technology, even tiny amount of haze defects on the photo mask may cause device failure. Especially, in ArF lithography era, haze problem which is caused by deep ultra violet (DUV) laser beam exposure of have more serious effects to the quality and productivity of photo mask than in former lithography generation using a KrF excimer laser. Because the photon energy of ArF excimer laser is much higher than that of KrF excimer laser, ArF excimer laser can more easily accelerate the photo-chemical reactions generating a haze defect on the photo mask between laser exposure beam and thin metallic film on the photo mask. In general, photochemical effects can occur whenever the energy of a single photon exceeds the dissociation energy for a component of the material. For example, the photon energy of the ArF excimer laser which has 193 nm wavelengths is approximately 6.4 eV and this photon energy can break the chemical single bonds of pellicle film of photo mask. It is widely known that the formation of haze defect depends on laser wavelength, accumulated energy density onto the photo mask, a kind and concentration of surrounding gases, humidity and cleaning method. Although many researchers have reported on efforts to find out the alternative improving the photo mask quality, reducing residual contamination level and revealing the exact cause of the haze generation on the photo mask, however performance improvement of such efforts has been difficult to measure. Typically test for haze generation and inspection by using production lithography system takes much time as well as this process is too expensive and risky. Accordingly Kornic Systems has developed and implemented laser induced haze acceleration system. This system can provide the solution to reduce of haze generation time and to reveal which factor make the haze onto the photo mask during lithography process. In this paper, we also introduce a practical ArF excimer laser system for accelerating the haze formation and simultaneously revealing the detrimental effects of haze generation on the photo mask in lithography process. The haze acceleration system which can control the accumulated energy density on the photo mask level, humidity, temperature and concentration of gases such as NH3 and SO2 in process chamber, could be an effective tool for providing technical and economical benefits to the photo mask and device manufacturers.

Paper Details

Date Published: 19 May 2008
PDF: 6 pages
Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70282F (19 May 2008); doi: 10.1117/12.799405
Show Author Affiliations
Dae-Jin Kim, Kornic Systems Corp. (South Korea)
Hyun-Jung Kim, Kornic Systems Corp. (South Korea)
Seung-Hwan Eom, Kornic Systems Corp. (South Korea)
Kwang-Jae Lee, Kornic Systems Corp. (South Korea)
Woon-Ki Cho, Kornic Systems Corp. (South Korea)
Sang-Hyun Chung, Kornic Systems Corp. (South Korea)

Published in SPIE Proceedings Vol. 7028:
Photomask and Next-Generation Lithography Mask Technology XV
Toshiyuki Horiuchi, Editor(s)

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