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Proceedings Paper

Frontside-illuminated quantum well photodetector for FIR range
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Paper Abstract

We have demonstrated the operation of a far-infrared frontside-illuminated GaAs/AlGaAs quantum well photodetector based on intersubband absorption in a quantum well (QW) with a targeted peak frequency of 3 THz (wavelength: ~100 μm). A multiple quantum well structure consists of 20 periods of 18 nm QWs interleaved by 80 nm barriers with an Al alloy content of 2%. We measured the following performance characteristics: dark current, responsivity, and spectral response. A responsivity of 13 mA/W at an electric bias of 40 mV and an operating temperature of 3 K was obtained with a peak response close to the designed detection frequency. The dark current density was a few μA/cm2 and was limited by thermally assisted tunneling through the barriers. We looked also at possible designs to optimize the device's performance.

Paper Details

Date Published: 3 September 2008
PDF: 7 pages
Proc. SPIE 7055, Infrared Systems and Photoelectronic Technology III, 70550M (3 September 2008); doi: 10.1117/12.797653
Show Author Affiliations
Mikhail Patrashin, National Institute of Information and Communications Technology (Japan)
Iwao Hosako, National Institute of Information and Communications Technology (Japan)

Published in SPIE Proceedings Vol. 7055:
Infrared Systems and Photoelectronic Technology III
Eustace L. Dereniak; Randolph E. Longshore; Ashok K. Sood; John P. Hartke; Paul D. LeVan, Editor(s)

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