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Proceedings Paper

Indoor characterization of photovoltaic modules under various conditions
Author(s): Marcus Zettl; Omar Stern; Oliver Mayer; Marianne Hartung; Mark Lynass; Eva Bernal
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Paper Abstract

Usually photovoltaic modules are characterized under standard testing conditions by subjecting them to an irradiation of 1000 W/m2 with an AM 1.5 spectrum and a cell temperature of 25°C. However, not all modules perform the same under real conditions since their efficiency is strongly affected by environmental fluctuations. To get real operation data, expensive outdoor test are performed. However, for most of the new thin film technologies, these data are not available yet. The experiments were conducted in an indoor solar simulator, which fulfills the requirements of irradiation level and solar spectrum within a homogeneous area of 2 by 2.5 meters. In this contribution we compare different PV modules, including first generation, thin films and emerging technologies, in order to understand their behavior under various conditions. The modules were tested as a function of incident angle and diffused versus direct irradiation. Another aspect that is also taken under consideration is the influence of temperature on the module performance. These measurements are necessary in order to make a correct assessment of energy yield in several geographical locations for residential, commercial and utility applications.

Paper Details

Date Published: 11 September 2008
PDF: 9 pages
Proc. SPIE 7046, Optical Modeling and Measurements for Solar Energy Systems II, 70460M (11 September 2008); doi: 10.1117/12.797283
Show Author Affiliations
Marcus Zettl, GE Global Research Europe (Germany)
Omar Stern, GE Global Research Europe (Germany)
Oliver Mayer, GE Global Research Europe (Germany)
Marianne Hartung, GE Global Research Europe (Germany)
Mark Lynass, GE Global Research Europe (Germany)
Eva Bernal, GE Global Research Europe (Germany)

Published in SPIE Proceedings Vol. 7046:
Optical Modeling and Measurements for Solar Energy Systems II
Benjamin K. Tsai, Editor(s)

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