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Proceedings Paper

Defect structure changes in the single Si-crystals after irradiation by high-energy electrons and long natural aging by high-resolution three-crystal x-ray diffractometry
Author(s): V. V. Dovganyuk; T. V. Lytvynchuk; V. V. Slobodyan; M. I. Fodchuk
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Paper Abstract

Methods of two- and three-crystal X-ray high-resolution diffractometry were used to investigate structural changes in Cz-Si single crystals irradiated with high-energy electrons (E=18 MeV). The results of experimental investigation were interpreted by means of a generalized dynamic theory of X-ray diffraction in real crystals with randomly distributed microdefects of various types and a damaged surface layer. As dominant defects, disc-shaped and spherical clusters - SiO2 precipitates, as well as dislocation loops were used.

Paper Details

Date Published: 22 April 2008
PDF: 7 pages
Proc. SPIE 7008, Eighth International Conference on Correlation Optics, 70081B (22 April 2008); doi: 10.1117/12.797224
Show Author Affiliations
V. V. Dovganyuk, Yu. Fedkovych National Univ. (Ukraine)
T. V. Lytvynchuk, Yu. Fedkovych National Univ. (Ukraine)
V. V. Slobodyan, Yu. Fedkovych National Univ. (Ukraine)
M. I. Fodchuk, Yu. Fedkovych National Univ. (Ukraine)

Published in SPIE Proceedings Vol. 7008:
Eighth International Conference on Correlation Optics
Malgorzata Kujawinska; Oleg V. Angelsky, Editor(s)

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