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Investigation of CdZnTe crystal defects using scanning spreading resistance microscopy
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Paper Abstract

Surface electronic properties of CdxZnyTe were characterized through scanning spreading resistance microscopy (SSRM) and correlated IR transmittance maps. We observed the magnitude of the SSRM current is dominant by the density of surface localized Te precipitates and spatial variation of Zn content. The magnitude of the average SSRM current for forward probe bias was found to correlate strongly with the density of Te precipitates, while the variation in I-V characteristics were caused by slight p-type or n-type characteristics due to non-uniformity in Zn content of the crystal. Experimentally observed I-V characteristics were simulated using thermionic emission theory.

Paper Details

Date Published: 4 September 2008
PDF: 9 pages
Proc. SPIE 7079, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics X, 70790C (4 September 2008); doi: 10.1117/12.796253
Show Author Affiliations
J. Liu, Univ. of South Carolina (United States)
K. C. Mandal, EIC Labs., Inc. (United States)
G. Koley, Univ. of South Carolina (United States)

Published in SPIE Proceedings Vol. 7079:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics X
Arnold Burger; Larry A. Franks; Ralph B. James, Editor(s)

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