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Proceedings Paper

Layered III-VI chalcogenide semiconductor crystals for radiation detectors
Author(s): Krishna C. Mandal; Alket Mertiri; Gary W. Pabst; Ronald G. Roy; Y. Cui; P. Battacharya; M. Groza; A. Burger; Adam M. Conway; Rebecca J. Nikolic; Art J. Nelson; Stephen A. Payne
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Paper Abstract

The layered anisotropic chalcogenide semiconductors GaSe and GaTe single crystals have been grown by a modified vertical Bridgman technique using high purity Ga (7N) and in-house zone refined (ZR) precursor materials (Se and Te). The crystals harvested from ingots of up to 10 cm length and up to 2" diameter, have been characterized by measuring resistivity through current-voltage (I-V) characteristics and bulk carrier concentration and mobility through Hall effect measurements. Micro-hardness, infrared microscopy, etching characteristics, low-temperature photoluminescence (PL) and contact resistivity studies have also been performed to further characterize the grown crystals.

Paper Details

Date Published: 4 September 2008
PDF: 12 pages
Proc. SPIE 7079, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics X, 70790O (4 September 2008); doi: 10.1117/12.796235
Show Author Affiliations
Krishna C. Mandal, EIC Labs., Inc. (United States)
Alket Mertiri, EIC Labs., Inc. (United States)
Gary W. Pabst, EIC Labs., Inc. (United States)
Ronald G. Roy, EIC Labs., Inc. (United States)
Y. Cui, Fisk Univ. (United States)
P. Battacharya, Fisk Univ. (United States)
M. Groza, Fisk Univ. (United States)
A. Burger, Fisk Univ. (United States)
Adam M. Conway, Lawrence Livermore National Lab. (United States)
Rebecca J. Nikolic, Lawrence Livermore National Lab. (United States)
Art J. Nelson, Lawrence Livermore National Lab. (United States)
Stephen A. Payne, Lawrence Livermore National Lab. (United States)

Published in SPIE Proceedings Vol. 7079:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics X
Arnold Burger; Larry A. Franks; Ralph B. James, Editor(s)

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