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Proceedings Paper

High-performance SiC avalanche photodiode for single ultraviolet photon detection
Author(s): Xiaogang Bai; Han-din Liu; Dion McIntosh; Joe C. Campbell
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Paper Abstract

Sensitive ultraviolet photodetectors are essential components for a growing number of civilian and military applications. In this paper, we report 4H Silicon Carbide (SiC) avalanche photodiodes (APDs) with a p-i-n structure. These APDs, range in diameter from 180 μm to 250μm, exhibit very low dark current (10s of pA at avalanche gain of 1000) and high gain in linear-mode operation. An external quantum efficiency of 48% at 280 nm is achieved at unity gain with a recessed-window structure. The differential resistance of a 250 μm recessed-window device at zero bias is estimated to be 6×1014 ohms. As a result of high external quantum efficiency, large area, and large differential resistance, a record high specific detectivity of 4.1×1014 cmHz 1/2 W-1, has been achieved. Single ultraviolet photon detection in Geiger-mode operation with gated quenching is also described. In this paper, we report single photon detection efficiency (SPDE) of 30% at 280 nm with a dark count probability (DCP) of 8×10-4.

Paper Details

Date Published: 26 August 2008
PDF: 8 pages
Proc. SPIE 7055, Infrared Systems and Photoelectronic Technology III, 70550Q (26 August 2008); doi: 10.1117/12.795218
Show Author Affiliations
Xiaogang Bai, Univ. of Virginia (United States)
Han-din Liu, Univ. of Virginia (United States)
Dion McIntosh, Univ. of Virginia (United States)
Joe C. Campbell, Univ. of Virginia (United States)

Published in SPIE Proceedings Vol. 7055:
Infrared Systems and Photoelectronic Technology III
Eustace L. Dereniak; Randolph E. Longshore; Ashok K. Sood; John P. Hartke; Paul D. LeVan, Editor(s)

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