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Proceedings Paper

Near-infrared enhanced position-sensitive avalanche photodiodes
Author(s): Richard A. Myers; Richard Farrell; Frank Robertson; James E. Carey; Eric Mazur
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Paper Abstract

A laser processing method was used to microstructure the surface of position-sensitive silicon avalanche photodiodes (PSAPDs) and enhance their near-infrared response. Following laser microstructuring and high-temperature annealing, experiments were performed on PSAPDs to determine their performance at 1064 nm. As a result of this processing method, we fabricated APDs with quantum efficiencies as high as 58% at 1064 nm. The enhanced near-infrared response has now been realized in both lateral effect and quadrant-type PSAPDs without altering their electronic noise, avalanche gain or position resolution. A near-infrared-enhanced PSAPD module with temperature control and position output was assembled and tested.

Paper Details

Date Published: 26 August 2008
PDF: 12 pages
Proc. SPIE 7055, Infrared Systems and Photoelectronic Technology III, 70550L (26 August 2008); doi: 10.1117/12.794866
Show Author Affiliations
Richard A. Myers, Radiation Monitoring Devices, Inc. (United States)
Richard Farrell, Radiation Monitoring Devices, Inc. (United States)
Frank Robertson, Radiation Monitoring Devices, Inc. (United States)
James E. Carey, SiOnyx, Inc. (United States)
Eric Mazur, Harvard Univ. (United States)

Published in SPIE Proceedings Vol. 7055:
Infrared Systems and Photoelectronic Technology III
Eustace L. Dereniak; Randolph E. Longshore; Ashok K. Sood; John P. Hartke; Paul D. LeVan, Editor(s)

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