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Proceedings Paper

Analysis for the characteristics of a voltage tunable functional quantum structure optoelectronic integrated device
Author(s): E. Darabi; V. Ahmadi; K. Mirabbaszadeh
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Paper Abstract

A physical model for the analysis of dynamic response of a voltage- tunable optoelectronic integrated device is outlined. The device is composed of an integrated quantum well Heterojunction Phototransistor (HPT) over a strained quantum well Laser Diode. The quantum well structure Hamiltonian is numerically solved by transfer matrix method to obtain the electron and hole subband energy levels taking in to account the valence band mixing effect and strain. In order to calculate the electroabsorption coefficient, the exciton equation is solved numerically in momentum space using the Gaussian quadrature method assuming parabolic band structure. Based on the model the device has two operation modes: amplification for small optical feedback coefficient and switching for higher values.

Paper Details

Date Published: 5 March 2008
PDF: 8 pages
Proc. SPIE 7009, Second International Conference on Advanced Optoelectronics and Lasers, 700911 (5 March 2008); doi: 10.1117/12.793424
Show Author Affiliations
E. Darabi, Amirkabir Univ. of Technology (Iran)
Atomic Energy Organization of Iran (Iran)
V. Ahmadi, Atomic Energy Organization of Iran (Iran)
Tarbiat Modares Univ. (Iran)
K. Mirabbaszadeh, Amirkabir Univ. of Technology (Iran)

Published in SPIE Proceedings Vol. 7009:
Second International Conference on Advanced Optoelectronics and Lasers
Igor A. Sukhoivanov; Vasily A. Svich; Yuriy S. Shmaliy, Editor(s)

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