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Proceedings Paper

An IntenCD map of a reticle as a feed-forward input to DoseMapper
Author(s): Michael Ben Yishai; Jo Finders; Robert Kazinczi; Arno Bleeker; Paul Luehrmann; Ingrid Janssen; Frank Duray; Lior Shoval; Christophe Couderc; Rich Piech; Noam Hillel; Ilan Englard
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Paper Abstract

The tight process window of advanced lithography in the semiconductor industry is further challenged by the growing contribution of photo-mask related CD variations. In previous technology generations, global measurement and global correction were sufficient to compensate for critical dimension uniformity (CDU) variations deriving from various sources. However, in the low K1 regime for 45nm nodes and below, cross-coupled effects such as Mask Error Enhancement Factor (MEEF) and mask CDU can easily consume the overall CD budget related to lithographic process steps (see table 3). ASML's DoseMapper was designed to correct system (e.g. scanner, track) and non-system (e.g. mask) related errors controlled by an Automated Process Control (APC) system. It was introduced as a method for correcting intra-field and inter-field variations, relying on feedback from printed wafer based metrology. Here we propose using AMAT's IntenCDTM map for supplying dense CDU measurement results from the reticle as a feed-forward input to DoseMapper. The IntenCDTM application characterizes CD uniformity of 'features of interest' across the mask in the form of a dense map with high accuracy and throughput. The case studies presented in this paper are the result of collaboration between AMAT and ASML to demonstrate the benefit of feeding IntenCD output into DoseMapper CD analyzer which translates the mask CD map into a scanner dose recipe. The integrated solution can be implemented in manufacturing factories to shorten turnaround time and improve the exposure process window. It can be used to compensate for CDU effects due to mask production as well as contributions due to life time deterioration.

Paper Details

Date Published: 19 May 2008
PDF: 11 pages
Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70283H (19 May 2008); doi: 10.1117/12.793124
Show Author Affiliations
Michael Ben Yishai, Applied Materials (United States)
Jo Finders, ASML (Netherlands)
Robert Kazinczi, ASML (Netherlands)
Arno Bleeker, ASML (Netherlands)
Paul Luehrmann, ASML (Netherlands)
Ingrid Janssen, ASML (Netherlands)
Frank Duray, ASML (Netherlands)
Lior Shoval, Applied Materials (United States)
Christophe Couderc, Applied Materials (United States)
Rich Piech, Applied Materials (United States)
Noam Hillel, Applied Materials (United States)
Ilan Englard, Applied Materials (United States)

Published in SPIE Proceedings Vol. 7028:
Photomask and Next-Generation Lithography Mask Technology XV
Toshiyuki Horiuchi, Editor(s)

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