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Proceedings Paper

Mask process effect aware OPC modeling
Author(s): Kyoil Koo; Sooryong Lee; Jason Hwang; Daniel Beale; Matt St. John; Robert Lugg; Seunghee Baek; Munhoe Do; Junghoe Choi; Youngchang Kim; Minjong Hong
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Paper Abstract

Although the mask pattern created by fine ebeam writing is four times larger than the wafer pattern, the mask proximity effect from ebeam scattering and etch is not negligible. This mask proximity effect causes mask-CD errors and consequently wafer-CD errors after the lithographic process. It is therefore necessary to include the mask proximity effect in optical proximity correction (OPC). Without this, an OPC model can not predict the entire lithography process correctly even using advanced optical and resist models. In order to compensate for the mask proximity effect within OPC a special model is required along with changes to the OPC flow. This article presents a method for producing such a model and OPC flow and shows the difference in results when they are used.

Paper Details

Date Published: 19 May 2008
PDF: 8 pages
Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70283E (19 May 2008); doi: 10.1117/12.793122
Show Author Affiliations
Kyoil Koo, Synopsys, Inc. (United States)
Sooryong Lee, Synopsys, Inc. (United States)
Jason Hwang, Synopsys, Inc. (United States)
Daniel Beale, Synopsys, Inc. (United States)
Matt St. John, Synopsys, Inc. (United States)
Robert Lugg, Synopsys, Inc. (United States)
Seunghee Baek, Synopsys, Inc. (United States)
Munhoe Do, Synopsys, Inc. (United States)
Junghoe Choi, Synopsys, Inc. (United States)
Youngchang Kim, Samsung Electronics Co., Ltd. (South Korea)
Minjong Hong, Samsung Electronics Co., Ltd. (South Korea)

Published in SPIE Proceedings Vol. 7028:
Photomask and Next-Generation Lithography Mask Technology XV
Toshiyuki Horiuchi, Editor(s)

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