
Proceedings Paper
The effects of buffer layers on the growth of smooth relaxed SiGe thin filmsFormat | Member Price | Non-Member Price |
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Paper Abstract
The smooth relaxed SiGe films were fabricated on Si(001) substrate using 30nm thick buffer layers by molecular beam
epitaxial (MBE). The buffer layers were fabricated as followings: first deposited 20nm thick SiGe alloy layer at 550°C,
then 10nm Si buffer was deposited at 400°C. After the buffers were finished, the top SiGe layer with the thickness of
200nm was deposited at 500°C. The deposition quality, thin film structure and residual strain in the film were
characterized by high-resolution X-ray diffraction (HRXRD). We found that the surface morphology and crystal quality
of SiGe thin film can be improved obviously. It was shown that SiGe top layer was relaxed and smooth by comparing the
measured and simulated (004) rocking curves. The peak range and relative position of the SiGe epilayer with respect to
the Si substrate in high-resolution reciprocal space map(HRRSM) described clearly the high crystal quality and the
strains relaxation. The surface morphologies of thin films were also observed by atomic force microscopy (AFM). The
surface is very smooth with RMS less than 7 Å.
Paper Details
Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841Y (11 March 2008); doi: 10.1117/12.792774
Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications
Wenzhong Shen; Junhao Chu, Editor(s)
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841Y (11 March 2008); doi: 10.1117/12.792774
Show Author Affiliations
Shuqi Zheng, China Univ. of Petroleum Beijing (China)
Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications
Wenzhong Shen; Junhao Chu, Editor(s)
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