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Proceedings Paper

Influence of substrate temperature on properties of tin sulfide thin films
Author(s): Yuying Guo; Weimin Shi; Yu Zhang; Linjun Wang; Guangpu Wei
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Paper Abstract

Tin sulfide (SnS) thin films for solar cells were deposited by vacuum evaporation at different substrate temperatures in a range of 20~200°C. The films were characterized with X-ray diffraction (XRD) and scanning electron microscopy (SEM) for structural analysis. The electrical and optical properties were also investigated. Under the substrate temperature of 150°C, the obtained SnS thin film was in orthorhombic structure with a grain size of 0.5 μm and composition of Sn:S =1:1. The measurement results from hot probe method showed p-type nature for the deposited films. Dark-conductivity and photo-conductivity were 0.01Ω-1•cm-1 and 0.08Ω-1•cm-1, respectively. The optical band-gap energy of the films was estimated to be 1.402 eV.

Paper Details

Date Published: 11 March 2008
PDF: 5 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841P (11 March 2008); doi: 10.1117/12.792635
Show Author Affiliations
Yuying Guo, Shanghai Univ. (China)
Weimin Shi, Shanghai Univ. (China)
Yu Zhang, Shanghai Univ. (China)
Linjun Wang, Shanghai Univ. (China)
Guangpu Wei, Shanghai Univ. (China)

Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications
Wenzhong Shen; Junhao Chu, Editor(s)

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