Proceedings Paper
Fabrication and properties study of Cu(In1-xGax)Se2 films by vacuum evaporation| Format | Member Price | Non-Member Price |
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Paper Abstract
The Cu(In1-xGax)Se2 (CIGS) thin films were prepared by stacked elemental layers (SEL) method via vacuum
evaporation. X-ray diffraction (XRD) analysis showed that the films were consisted of chalcopyrite CIGS phase.
Scanning electronic microscopy indicated that the film surface was compact and the grain size was about 1μm. It was
found that CIGS film with preparation sequence Ga/In/Cu/Se was of best crystalline quality. Besides, adding Ga greatly
improved the crystallinity for all sequences compared with CIS films at the same annealing temperature.
Paper Details
Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841C (11 March 2008); doi: 10.1117/12.792406
Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications
Wenzhong Shen; Junhao Chu, Editor(s)
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841C (11 March 2008); doi: 10.1117/12.792406
Show Author Affiliations
Ai-min Li, Shanghai Univ. (China)
Juan Qin, Shanghai Univ. (China)
Juan Qin, Shanghai Univ. (China)
Wei-min Shi, Shanghai Univ. (China)
Guang-pu Wei, Shanghai Univ. (China)
Guang-pu Wei, Shanghai Univ. (China)
Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications
Wenzhong Shen; Junhao Chu, Editor(s)
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