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Proceedings Paper

Preparation of polycrystalline HgI2 films by PVD method under ultrasonic wave
Author(s): Yaoming Zheng; Weimin Shi; Guangpu Wei; Juan Qin; Sheng Chen; Linjun Wang; Yiben Xia
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Paper Abstract

Highly oriented polycrystalline α-HgI2 thick films are fabricated by physical vapor deposition method under the conditions of 59KHz ultrasonic wave and relatively lower source temperature of 80°C. The ultrasonic wave is used in the process of physical vapor deposition films preparation for the first time. With the effect of ultrasonic wave, the film quality and the growth rate can be obviously improved. The growth mechanism as well as impacts of ultrasonic wave is also discussed.

Paper Details

Date Published: 11 March 2008
PDF: 5 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842Y (11 March 2008); doi: 10.1117/12.792378
Show Author Affiliations
Yaoming Zheng, Shanghai Univ. (China)
Weimin Shi, Shanghai Univ. (China)
Guangpu Wei, Shanghai Univ. (China)
Juan Qin, Shanghai Univ. (China)
Sheng Chen, Shanghai Univ. (China)
Linjun Wang, Shanghai Univ. (China)
Yiben Xia, Shanghai Univ. (China)

Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications
Wenzhong Shen; Junhao Chu, Editor(s)

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