Proceedings Paper
The properties of ZnO thin films fabricated by ion beam sputtering and RF magnetron sputtering| Format | Member Price | Non-Member Price |
|---|---|---|
| $17.00 | $21.00 |
Paper Abstract
ZnO thin films were prepared by two methods .One was ion beam sputtering then annealing at 700°C in O2, another was
RF magnetron sputtering then annealing at 600°C in O2. The structures, morphologies, and electrical resistivities of the
ZnO films prepared by two methods were investigated and compared. The influences of two different methods on
properties of ZnO thin film were studied by XRD, AFM and LCR HITESTER. Compared with RF magnetron sputtering,
the ZnO films fabricated by ion beam sputtering deposition have disordered growth orientation, bigger surface roughness
and higher electrical resistivity.
Paper Details
Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842T (11 March 2008); doi: 10.1117/12.792278
Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications
Wenzhong Shen; Junhao Chu, Editor(s)
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842T (11 March 2008); doi: 10.1117/12.792278
Show Author Affiliations
X. X. He, Hefei Univ. of Technology (China)
H. Q. Li, Hefei Univ. of Technology (China)
J. B. Gu, Hefei Univ. of Technology (China)
H. Q. Li, Hefei Univ. of Technology (China)
J. B. Gu, Hefei Univ. of Technology (China)
S. B. Wu, Hefei Univ. of Technology (China)
B. Cao, Hefei Univ. of Technology (China)
B. Cao, Hefei Univ. of Technology (China)
Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications
Wenzhong Shen; Junhao Chu, Editor(s)
© SPIE. Terms of Use
