The present study focuses on the numerical study of 4H-SiC film deposition on a horizontally 4H-SiC substrate with H₂ as the carrier gas and C₃H₈ and SiH₄ as precursors in low pressure using a hot wall CVD reactor. The growth rate along the susceptor is calculated. The effect of inlet C/Si ratio on the growth rate is investigated. Among the reacting species C₂H₂, CH₃SiH₂SiH, Si and SiH₂ contribute most to growth.

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842Q (11 March 2008); doi: 10.1117/12.792270

Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications
Wenzhong Shen; Junhao Chu, Editor(s)