The polysilicon ohmic contacts to n-type 4H-SiC have been fabricated. TLM (Transfer Length Method) test patterns with polysilicon structure are formed on N-wells created by phosphorus ion (P⁺) implantation into Si-faced p-type 4H-SiC epilayer. The polysilicon is deposited using low-pressure chemical vapor deposition (LPCVD) and doped by phosphorous ions implantation followed by diffusion to obtain a sheet resistance of 22Ω/square The specific contact resistance ρ_c of n⁺ polysilicon contact to n-type 4H-SiC as low as 3.82×10^-5Ωcm² is achieved. The result for sheet resistance R_sh of the P⁺ implanted layers in SiC is about 4.9kΩ/square. The mechanisms for n⁺ polysilicon ohmic contact to ntype SiC are discussed.

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69843F (11 March 2008); doi: 10.1117/12.792192

Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications
Wenzhong Shen; Junhao Chu, Editor(s)