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Properties of homoepitaxial 4H-SiC and characteristics of Ti/4H-SiC Schottky barrier diodes
Author(s): G. Chen; Z. Y. Li; S. Bai; P. Han
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Paper Abstract

This paper describes the properties of the homoepitaxial 4H-SiC layer, the fabrication and electrical parameters of Ti/4H-SiC Schottky barrier diode (SBD). The 4H-SiC epitaxial layers, grown on the commercially available 8°off-oriented Si-face(0001) single-crystal 4H-SiC wafers, have been performed at 1550~1600°C by using the step controlled epitaxy with low pressure chemical vapor deposition. X-ray diffraction measurement result indicates the single crystal nature of the epilayer, and Raman spectrum shows the typical 4H-SiC feature peaks. When the off-oriented angle of substrate is 8°, the epitaxial growth perfectly replicates the substrate's polytype. High quality 4H-SiC epilayer has been generated on the 4H-SiC substrate. Ti/4H-SiC SBDs with blocking voltage 1kV have been made on an undoped epilayer with 12um in thick and 3×1015cm-3 in carrier density. The ideality factor n=1.16 and the effective barrier height φe=0.9V of the Ti/4H-SiC SBDs are measured with method of forward density-voltage (J-V). The diode rectification ratio of forward to reverse (defined at ±1V) is over 107 at room temperature. By using B+ implantation, an amorphous layer as the edge termination is formed. The SBDs have on-state current density of 200A/cm2 at a forward voltage drop of about 2V. The specific on-resistance for the rectifier is found to be as 6.6mΩ•cm2.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842L (11 March 2008); doi: 10.1117/12.792156
Show Author Affiliations
G. Chen, Nanjing Univ. (China)
Nanjing Electronic Devices Institute (China)
Z. Y. Li, Nanjing Electronic Devices Institute (China)
S. Bai, Nanjing Electronic Devices Institute (China)
P. Han, Nanjing Univ. (China)

Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications
Wenzhong Shen; Junhao Chu, Editor(s)

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