A heterojunction of heavy phosphorus doped hydrogenated nanocrystalline Si (nc-Si:H) film with p⁺-type crystalline Si wafer was prepared and measured to investigate stress effect on electronic characteristics. According to electrical experiments, the yielded structure was demonstrated as a semiconductor backward diode. Energy band gap of nc-Si:H was inferred to equal that of amorphous Si:H because nanocrystals imbedded in amorphous Si:H matrices. Mechanical stress effect on electronic characteristics for the operated unit was interpreted by stress-induced defect states since a mass of defects distributed in inhomogenous material. Reverse current showing good linearly dependent on applied stress with a effectual method of conversing mechanical signal to electronic one before breakdown was indicated.

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 698403 (11 March 2008); doi: 10.1117/12.792152

Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications
Wenzhong Shen; Junhao Chu, Editor(s)